Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation

Zhang Yan-Qing¹, Ho Ming-Xue², Wu Yi-Yong^{1, 2, †}, Sun Cheng-Yue², Zhao Hui-Jie¹, Geng Hong-Bin¹, Wang Shuai³, Liu Ru-Bin³, Sun Qiang³

(color online) Variations of normalized effective carrier life-time with irradiation electron fluence of GaAs and Ga In As cells.