Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation

Zhang Yan-Qing¹, Ho Ming-Xue², Wu Yi-Yong^{1, 2, †}, Sun Cheng-Yue², Zhao Hui-Jie¹, Geng Hong-Bin¹, Wang Shuai³, Liu Ru-Bin³, Sun Qiang³

(color online) Variations of remaining factors of (a) , (b) , and (c) with fluence for Ga In As (0.7 eV), Ga In As (1.0 eV), and GaAs (1.41 eV) cells irradiated by 1-MeV electron.