Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation
Zhang Yan-Qing1, Ho Ming-Xue2, Wu Yi-Yong1, 2, †, Sun Cheng-Yue2, Zhao Hui-Jie1, Geng Hong-Bin1, Wang Shuai3, Liu Ru-Bin3, Sun Qiang3
       

(color online) Configuration of the GaAs (1.41 eV) cells.