Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation
Zhang Yan-Qing1, Ho Ming-Xue2, Wu Yi-Yong1, 2, †, Sun Cheng-Yue2, Zhao Hui-Jie1, Geng Hong-Bin1, Wang Shuai3, Liu Ru-Bin3, Sun Qiang3
       

(color online) Configurations of the sub-cells of (a) Ga In As (1.0 eV) and (b) Ga In As (0.7 eV). The grown structure is affixed to an Si handle and then the GaAs growth substrate is removed.