An investigation of ionizing radiation damage in different SiGe processes

Li Pei¹, Liu Mo-Han³, He Chao-Hui^{1, †}, Guo Hong-Xia², Zhang Jin-Xin¹, Ma Ting¹

(color online) Density of positive oxide trap charge in SiGe HBT models at state 2. (a) KT9041; (b) IBM 8HP.