An investigation of ionizing radiation damage in different SiGe processes
Li Pei1, Liu Mo-Han3, He Chao-Hui1, †, Guo Hong-Xia2, Zhang Jin-Xin1, Ma Ting1
       

(color online) Density of oxygen vacancy in SiGe HBT models at state 1. (a) KT9041; (b) IBM 8HP.