An investigation of ionizing radiation damage in different SiGe processes

Li Pei¹, Liu Mo-Han³, He Chao-Hui^{1, †}, Guo Hong-Xia², Zhang Jin-Xin¹, Ma Ting¹

(color online) Schematic diagram of device cross section of the SiGe HBTs. (a) KT9041, (b) IBM 8HP (not to scale).