An investigation of ionizing radiation damage in different SiGe processes

Li Pei¹, Liu Mo-Han³, He Chao-Hui^{1, †}, Guo Hong-Xia², Zhang Jin-Xin¹, Ma Ting¹

(color online) Excess base current as a function of accumulated total dose and annealing time at of 0.6 V. (a) KT1151 SiGe HBT; (b) KT9041 SiGe HBT.