Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Zhang Jin-Xin¹, He Chao-Hui^{2, †}, Guo Hong-Xia³, Li Pei², Guo Bao-Long¹, Wu Xian-Xiang¹

(color online) Peak value of transient current and collected charges as function of doping concentration of substrate: (a) peak value of transient current, (b) final charge collection.