Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Zhang Jin-Xin¹, He Chao-Hui^{2, †}, Guo Hong-Xia³, Li Pei², Guo Bao-Long¹, Wu Xian-Xiang¹

(color online) Current versus time at various terminals for different substrate doping: (a) substrate doping concentration of cm , (b) substrate doping concentration of cm .