Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor
(color online) Peak values of transient current as a function of doping concentration of epitaxial base.
Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor |
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(color online) Peak values of transient current as a function of doping concentration of epitaxial base. |
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