Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor
Zhang Jin-Xin1, He Chao-Hui2, †, Guo Hong-Xia3, Li Pei2, Guo Bao-Long1, Wu Xian-Xiang1
       

(color online) Peak values of transient current as function of doping concentration of base.