Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Zhang Jin-Xin¹, He Chao-Hui^{2, †}, Guo Hong-Xia³, Li Pei², Guo Bao-Long¹, Wu Xian-Xiang¹

(color online) Currents versus time at various terminals for different base doping: (a) base doping concentration cm , (b) base doping concentration cm .