Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Ye Bing^{1, 2, 3}, Liu Jie^{1, †}, Wang Tie-Shan³, Liu Tian-Qi^{1, 2}, Luo Jie^{1, 2}, Wang Bin^{1, 2}, Yin Ya-Nan^{1, 2}, Ji Qing-Gang^{1, 2}, Hu Pei-Pei^{1, 2}, Sun You-Mei¹, Hou Ming-Dong¹

(color online) The simulated SEU cross section (red down-triangle symbols) of the device and the absolute energy straggling (blue circle symbols) as a function of initial proton energy, the proton energy at the chip surface is the same (0.68 MeV).