Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Ye Bing^{1, 2, 3}, Liu Jie^{1, †}, Wang Tie-Shan³, Liu Tian-Qi^{1, 2}, Luo Jie^{1, 2}, Wang Bin^{1, 2}, Yin Ya-Nan^{1, 2}, Ji Qing-Gang^{1, 2}, Hu Pei-Pei^{1, 2}, Sun You-Mei¹, Hou Ming-Dong¹

(color online) The distribution of proton range in the chip (simulated by SRIM-2008). Each energy represents the initial proton energy, and through adding different thicknesses of aluminum degrader, the energies at the chip surface are the same (0.68 MeV).