Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Ye Bing^{1, 2, 3}, Liu Jie^{1, †}, Wang Tie-Shan³, Liu Tian-Qi^{1, 2}, Luo Jie^{1, 2}, Wang Bin^{1, 2}, Yin Ya-Nan^{1, 2}, Ji Qing-Gang^{1, 2}, Hu Pei-Pei^{1, 2}, Sun You-Mei¹, Hou Ming-Dong¹

(color online) Bragg curve of 1.0-MeV proton penetrating into silicon. The inset shows the three possible cases for proton incident to the chip: (i) the proton range is not enough to reach to the SV of the device; (ii) the Bragg peak of the proton is located in the SV of the device exactly; (iii) the proton range is larger than the position of the SV.