Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Ye Bing^{1, 2, 3}, Liu Jie^{1, †}, Wang Tie-Shan³, Liu Tian-Qi^{1, 2}, Luo Jie^{1, 2}, Wang Bin^{1, 2}, Yin Ya-Nan^{1, 2}, Ji Qing-Gang^{1, 2}, Hu Pei-Pei^{1, 2}, Sun You-Mei¹, Hou Ming-Dong¹

(color online) The tested (red triangle symbols) and simulated (black circle symbols) SEU cross section as a function of proton energy at the chip surface for the 65-nm SRAM. Simulated SEU cross section are calculated directly by CRÈME-MC except for the proton energy is 16 MeV and 39 MeV. Error bars in this figure are smaller than the data symbols.