Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
Ye Bing1, 2, 3, Liu Jie1, †, Wang Tie-Shan3, Liu Tian-Qi1, 2, Luo Jie1, 2, Wang Bin1, 2, Yin Ya-Nan1, 2, Ji Qing-Gang1, 2, Hu Pei-Pei1, 2, Sun You-Mei1, Hou Ming-Dong1
       

(color online) The energy distribution on the device surface and the absolute energy straggling (red up-triangle symbols) of the proton energy with different thicknesses of copper. Initial proton energies are the same (200 MeV).