Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Ye Bing^{1, 2, 3}, Liu Jie^{1, †}, Wang Tie-Shan³, Liu Tian-Qi^{1, 2}, Luo Jie^{1, 2}, Wang Bin^{1, 2}, Yin Ya-Nan^{1, 2}, Ji Qing-Gang^{1, 2}, Hu Pei-Pei^{1, 2}, Sun You-Mei¹, Hou Ming-Dong¹

(color online) (a) The SEM view of the passivation and metallization layers. (b) Schematic chart of the multilayer structure and weighted SV model used in CRÈME-MC simulation of the device, with a cubic surface area of 10 μm × 10 μm. Not drawn exactly in accordance with the scale.