Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate

Zhang Wang^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Lv Qi-Feng^{1, 2}, Ji Xiang-Hai⁴, Yang Tao^{4, ‡}, Yang Fu-Hua^{1, 2, 3, §}

(color online) Relationship between and temperature of InAs NWT. The dots are the measured data and the line represents fitting data. This measurement is conducted at .