Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate

Zhang Wang^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Lv Qi-Feng^{1, 2}, Ji Xiang-Hai⁴, Yang Tao^{4, ‡}, Yang Fu-Hua^{1, 2, 3, §}

(color online) Fabricated Si-based horizontal InAs NWT under optical microscope. Drain, source, and gate electrodes are marked separately. The green arrow points to the contact window of S/D.