Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate

Zhang Wang^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Lv Qi-Feng^{1, 2}, Ji Xiang-Hai⁴, Yang Tao^{4, ‡}, Yang Fu-Hua^{1, 2, 3, §}

(color online) SEM images of the InAs nanowires grown between two Si sidewalls. (a) Top view of interdigital structure and horizontal InAs nanowires. (b) Nanowires uniform in the direction and the orientation of the top silicon layer vertical to the nanowires.