Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate

Zhang Wang^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Lv Qi-Feng^{1, 2}, Ji Xiang-Hai⁴, Yang Tao^{4, ‡}, Yang Fu-Hua^{1, 2, 3, §}

(color online) Schematics illustrating the fabrication process flow. (a) Dry oxidation and ion implantation. (b) Formation of dumbbell-like isolation. (c) Defining the interdigital structure on the top Si layer. (d) Epitaxy of horizontal InAs nanowires by MOCVD. (e) Deposition of Al₂O₃ gate dielectrcs on InAs nanowires. (f) Metal doposition and ohmic contact for S/D. (g) Gate electrode doposition.