Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Jiang Shuai1, 2, †, Jia Rui1, ‡, Tao Ke1, Hou Caixia1, Sun Hengchao1, Yu Zhiyong3, Li Yongtao1
       

(color online) The charge concentration and electric field density near front surface with different polycrystalline silicon thicknesses (3 nm, 9 nm, 19 nm) and different polycrystalline silicon doping levels of , (a) and (b); , (c) and (d); , (e) and (f). The position of corresponds to the interface of polycrystalline silicon and SiO2, and the thickness of SiO2 layer is 1 nm.