Studies on the polycrystalline silicon/SiO<sub><b>2</b></sub> stack as front surface field for IBC solar cells by two-dimensional simulations

Studies on the polycrystalline silicon/SiO₂ stack as front surface field for IBC solar cells by two-dimensional simulations

Jiang Shuai^{1, 2, †}, Jia Rui^{1, ‡}, Tao Ke¹, Hou Caixia¹, Sun Hengchao¹, Yu Zhiyong³, Li Yongtao¹

(color online) The holes concentration near front surface with different doping levels of polycrystalline silicon layer. The position of corresponds to the interface between polycrystalline silicon layer and SiO₂ layer. The thickness of the polycrystalline silicon layer and SiO₂ layer are 10 nm and 1 nm respectively.