Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Jiang Shuai1, 2, †, Jia Rui1, ‡, Tao Ke1, Hou Caixia1, Sun Hengchao1, Yu Zhiyong3, Li Yongtao1
       

(color online) The charge distribution and holes current distribution near front surface with polycrystalline siliconlayer’s doping level of 1017 cm−3 (a), and 1020 cm−3 (b).