Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Jiang Shuai1, 2, †, Jia Rui1, ‡, Tao Ke1, Hou Caixia1, Sun Hengchao1, Yu Zhiyong3, Li Yongtao1
       

(color online) The electric field intensity in Y direction near front surface with different doping level of polycrystalline silicon layer. The position of corresponds to the interface between polycrystalline silicon and SiO2 layer. The thickness of the polycrystalline silicon layer and SiO2 layer are 10 nm and 1 nm respectively.