Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Jiang Shuai1, 2, †, Jia Rui1, ‡, Tao Ke1, Hou Caixia1, Sun Hengchao1, Yu Zhiyong3, Li Yongtao1
       

(color online) The electron current density in Y direction at the interface between polycrystalline silicon and SiO2 with different doping levels of polycrystalline silicon layer. The range of X axis covers a whole pitch of the IBC solar cell.