Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Jiang Shuai1, 2, †, Jia Rui1, ‡, Tao Ke1, Hou Caixia1, Sun Hengchao1, Yu Zhiyong3, Li Yongtao1
       

(color online) The hole concentration at the substrate side near the interface between substrate and SiO2 layer with different SiO2 thicknesses. The position of corresponds to the interface between substrate and SiO2 layer.