Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
Jiang Shuai1, 2, †, Jia Rui1, ‡, Tao Ke1, Hou Caixia1, Sun Hengchao1, Yu Zhiyong3, Li Yongtao1
       

(color online) The electric field density near front surface with different thicknesses of SiO2 layer. The position of corresponds to the interface between polycrystalline silicon and SiO2. The region of SiO2 layer is omitted in the graph since the electric field in SiO2 layer is constant.