Studies on the polycrystalline silicon/SiO<sub><b>2</b></sub> stack as front surface field for IBC solar cells by two-dimensional simulations

Studies on the polycrystalline silicon/SiO₂ stack as front surface field for IBC solar cells by two-dimensional simulations

Jiang Shuai^{1, 2, †}, Jia Rui^{1, ‡}, Tao Ke¹, Hou Caixia¹, Sun Hengchao¹, Yu Zhiyong³, Li Yongtao¹

(color online) The recombination rate at the polycrystalline silicon side near the interface between polycrystalline silicon layer and SiO₂ layer with different SiO₂ thickness. The doping level of polycrystalline silicon is and the thickness of polycrystalline silicon is 10 nm.