Improvement of the high-<i>κ</i>/Ge interface thermal stability using an <i>in-situ</i> ozone treatment characterized by conductive atomic force microscopy

Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Fan Ji-Bin^{1, †}, Cheng Xiao-Jiao¹, Liu Hong-Xia², Wang Shu-Long², Duan Li¹

(color online) I–V curves of the HfO₂/Al₂O₃ gate stacks on Ge substrate measured at the positions of conductive spots in CAFM images using a Pt-coated tip.