Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Cui Yan^{1, 2}, Yang Ling^{1, 2}, Gao Teng^{1, 2}, Li Bo^{1, 2}, Luo Jia-Jun^{1, 2, †}

(a) TEM cross-section images of 1T–1MTJ memory cell of (a) 1-Mb MRAM and (b) 4-Mb MRAM, where MTJs are marked by the black boxes. Enlarged MTJ images of (c) 1-Mb MRAM and (d) 4-Mb MRAM, where insets show enlarged images of the MTJ stacked structures.