Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Cui Yan^{1, 2}, Yang Ling^{1, 2}, Gao Teng^{1, 2}, Li Bo^{1, 2}, Luo Jia-Jun^{1, 2, †}

(color online) Variations of (a) current in read operation, (b) current in write operation, and (c) AC standby current with annealing time of the failed 4-Mb MRAM. The DUTs are annealed at room temperature with pins electrically floating.