Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Cui Yan^{1, 2}, Yang Ling^{1, 2}, Gao Teng^{1, 2}, Li Bo^{1, 2}, Luo Jia-Jun^{1, 2, †}

(color online) Photos of MRAM devices: (a) 44 pins 1-Mb MRAM and (b) 44 pins 4-Mb MRAM, under test.