Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Cui Yan^{1, 2}, Yang Ling^{1, 2}, Gao Teng^{1, 2}, Li Bo^{1, 2}, Luo Jia-Jun^{1, 2, †}

(color online) Simplified circuit diagram of MRAMs operating in static state during irradiation. The worst-case state is biased to 3.6 V.