Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Cui Yan^{1, 2}, Yang Ling^{1, 2}, Gao Teng^{1, 2}, Li Bo^{1, 2}, Luo Jia-Jun^{1, 2, †}

Metal element EDX spectra of 1-Mb and 4-Mb MTJ stacked structures. The t is the depth from the top layer to the bottom layer of the MTJ. The test depth is 50 nm which is shown in the MTJ image labeled by the black stick. (a) The EDX spectra of 1-Mb MTJ stacked structure. For clarity, all curves are shifted along the y axis in the order of Pt, Ta, Ni, Co, Fe, Mn, and Al from bottom to top. (b) The EDX spectra of 4-Mb MTJ stacked structure. For clarity, all curves are shifted along the y axis in the order of Pt, Ta, Ru, Ni, Co, Fe, Mn, and Al from bottom to top.