Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Cui Yan^{1, 2}, Yang Ling^{1, 2}, Gao Teng^{1, 2}, Li Bo^{1, 2}, Luo Jia-Jun^{1, 2, †}

(color online) Toggle MRAM structure. The magnetic moment of the pinned layer is fixed by an antiferromagnetic layer, which is not shown. The magnetization direction of the free layer can be changed by a magnetic field generated by bit line and digit line.