Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
Li Yangfeng1, 2, Jiang Yang1, 2, Die Junhui1, 2, Wang Caiwei1, 2, Yan Shen1, 2, Ma Ziguang1, 2, Wu Haiyan1, 2, Wang Lu1, 2, Jia Haiqiang1, 2, Wang Wenxin1, 2, Chen Hong1, 2, †
       

(color online) The EL performance of LED A and LED B. (a) EL spectra at 20-mA current injection condition for LED A and LED B. Single peaks of green light emission centered at the same peak wavelength of 530 nm are obtained from both samples. (b) The light output power (LOP) and forward voltage of LED A and LED B at different current injections. At 20-mA current injection, the LOP of LED A is 2.14 times higher than LED B, while the forward voltages are 4.24 V and 3.86 V of LED A and LED B, respectively. (c) The peak wavelength and FWHM of LED A and LED B as a function of the injection current. LED A has both lower blue-shift of peak wavelength and narrower FWHM than LED B as the injection current increases.