Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
Li Yangfeng1, 2, Jiang Yang1, 2, Die Junhui1, 2, Wang Caiwei1, 2, Yan Shen1, 2, Ma Ziguang1, 2, Wu Haiyan1, 2, Wang Lu1, 2, Jia Haiqiang1, 2, Wang Wenxin1, 2, Chen Hong1, 2, †
       

(color online) HRXRD ω–2θ scan curves and simulation fitting curves of LED A and LED B. The simulation fitting curves coincide well with the experimental data.