Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Zhao Linna¹, Yu Peihong¹, Guo Zixiang^³, Yan Dawei^{1, †}, Zhou Hao¹, Wu Jinbo¹, Cui Zhiqiang¹, Sun Huarui^², Gu Xiaofeng^{1, ‡}

(color online) (a) Surface morphology of the GaN LEDs, (b) SEM images of the cross section after FIB cuts and (c) of the mesa side observed from a slight tile angle, and (d) OBIRCH image after breakdown failure.