Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Zhao Linna¹, Yu Peihong¹, Guo Zixiang^³, Yan Dawei^{1, †}, Zhou Hao¹, Wu Jinbo¹, Cui Zhiqiang¹, Sun Huarui^², Gu Xiaofeng^{1, ‡}

(color online) (a) Number of EL spots as a function of leakage current stressed at V = −28 V, and (b) Weibull plot of the time-to-failure for each failure site, with the Weibull slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively.