Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Zhao Linna¹, Yu Peihong¹, Guo Zixiang^³, Yan Dawei^{1, †}, Zhou Hao¹, Wu Jinbo¹, Cui Zhiqiang¹, Sun Huarui^², Gu Xiaofeng^{1, ‡}

(color online) (a) The current evolution during the step-stress experiments of the GaN-based LEDs, and (b) the catastrophic failure process as a function of time at a high reverse bias of -40 V. The inset shows the spatial distribution of the EL spots before and after device failure.