Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow
(color online) Dark I–V curves for photodiodes fabricated on samples A–C. The diameter of the Schottky contact is 150 μm.
Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow |
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(color online) Dark I–V curves for photodiodes fabricated on samples A–C. The diameter of the Schottky contact is 150 μm. |
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