Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Li Bin^{2, 3}, Huang Shan-Jin², Wang Hai-Long², Wu Hua-Long², Wu Zhi-Sheng¹, Wang Gang¹, Jiang Hao^{1, †}

(color online) PL spectra of InGaN/GaN MQWs grown with different TEGa flows measured at 8 K. Inset shows the Arrhenius plots of the integrated TDPL intensity of samples A, B, and C. The solid lines are the corresponding fitting curves.