A facile and efficient dry transfer technique for two-dimensional Van derWaals heterostructure
Xie Li1, 2, Du Luojun1, Lu Xiaobo1, 2, Yang Rong1, 2, †, Shi Dongxia1, 2, Zhang Guangyu1, 2, 3, 4, ‡
       

(color online) Invertor made from the p-BN/MoS /BN heterostructure. (a) OM image of the invertor based on p-BN/MoS /BN heterostructure in Fig. 4(e) (the fuchsia dotted area indicates the MoS flake). (b) Schematic diagram of the invertor in panel (a). (c) Left axis: typical transfer characteristic curve (@ bias voltage of 1 V) of the MoS channel in the invertor in panel (b). Right axis: corresponding leakage currents in the transfer characteristic measurement. (d) Output voltages as a function of input voltages. Inset is the schematic drawing of the electronic circuit. (e) -dependence of the invert gain.