Thermal stability and data retention of resistive random access memory with HfO<sub><i>x</i></sub>/ZnO double layers

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Lai Yun-Feng^†, Chen Fan, Zeng Ze-Cun, Lin PeiJie, Cheng Shu-Ying, Yu Jin-Ling

(color online) Temperature-dependence of the retention failure times and their fitting lines following the Arrhenius equation for the DL-RRAM- and the 30-nm HfO_x-based SL-RRAMs.