Thermal stability and data retention of resistive random access memory with HfO<sub><i>x</i></sub>/ZnO double layers

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Lai Yun-Feng^†, Chen Fan, Zeng Ze-Cun, Lin PeiJie, Cheng Shu-Ying, Yu Jin-Ling

(color online) Data retention at different temperatures for [(a) and (c)] the DL-RRAM and [(b) and (d)] the SL-RRAM.