Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
Lai Yun-Feng †, Chen Fan, Zeng Ze-Cun, Lin PeiJie, Cheng Shu-Ying, Yu Jin-Ling
(color online) (a) – curves of the LRS of the DL-RRAM at different temperatures, and (b) the intercepts obtained from the curves in panel (a) as a function of .