Thermal stability and data retention of resistive random access memory with HfO<sub><i>x</i></sub>/ZnO double layers

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Lai Yun-Feng^†, Chen Fan, Zeng Ze-Cun, Lin PeiJie, Cheng Shu-Ying, Yu Jin-Ling

(color online) Temperature-dependent currents @0.5 V for the HRS and LRS of the DL-RRAMs.